INSITU CONTACTS TO GAAS BASED ON INAS

被引：55

作者：

WRIGHT, SL

MARKS, RF

TIWARI, S

JACKSON, TN

BARATTE, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 22期

关键词：

D O I：

10.1063/1.97277

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1545 / 1547

页数：3

共 19 条

[1]

BARATTE H, 1986, UNPUB DEC INT EL DEV

[2] OHMIC CONTACTS TO GAAS [J].

BRASLAU, N .

THIN SOLID FILMS, 1983, 104 (3-4) :391-397

[3] ABSENCE OF FERMI LEVEL PINNING AT METAL-INX GA1-XAS (100) INTERFACES [J].

BRILLSON, LJ ;

SLADE, ML ;

VITURRO, RE ;

KELLY, MK ;

TACHE, N ;

MARGARITONDO, G ;

WOODALL, JM ;

KIRCHNER, PD ;

PETTIT, GD ;

WRIGHT, SL .

APPLIED PHYSICS LETTERS, 1986, 48 (21) :1458-1460

[4]

GLAZOV VM, 1976, SOV PHYS SEMICOND+, V10, P378

[5] LOW-RESISTANCE NONALLOYED OHMIC CONTACTS TO SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS [J].

KIRCHNER, PD ;

JACKSON, TN ;

PETTIT, GD ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :26-28

[6] DETERMINATION OF THE INAS-GAAS(100) HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS) [J].

KOWALCZYK, SP ;

SCHAFFER, WJ ;

KRAUT, EA ;

GRANT, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :705-708

[7]

MILNES AG, 1972, HETEROJUNCTIONS META, P8

[8] N-N SEMICONDUCTOR HETEROJUNCTIONS [J].

OLDHAM, WG ;

MILNES, AG .

SOLID-STATE ELECTRONICS, 1963, 6 (02) :121-132

[9]

RAO MA, UNPUB 1986 IEEE T EL

[10] BARRIER HEIGHT REDUCTION FOR GRADED N-N HETEROJUNCTIONS [J].

RAYMOND, RM ;

HAYES, RE .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1359-1360

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