Self-assembled InAs/GaAs quantum dots under resonant excitation

The energy structure and the carrier relaxation in self-assembled InAs/GaAs quantum dots (SADs) is investigated by photoluminescence excitation spectroscopy (PLE) and photoluminescence (PL) at resonant excitation (below the GaAs and the wetting layer bandgap). In PLE measurements we find a clear resonance from the first excited hole state as well as resonances from a relaxation via different phonons. From a comparison of the PL-rise times in time resolved spectroscopy, we conclude on a fast electron relaxation (less than or equal to 50 ps) and a slow hole relaxation with a time constant of about 400 ps. Different relaxation paths are observed in the InAs/GaAs quantum dot system and allow us to identify the hole relaxation in the SADs as multiphonon assisted tunneling. The PL-decay time in the SADs after resonant excitation (about 600 ps) is attributed to the lifetime of the quantum dot exciton. In agreement with theoretical predictions, we find a constant lifetime of about 600 ps for temperatures below 50 K and a linear increase of the lifetime between 50 and 100 K with a slope of 26 ps/K. (C) 1998 American Institute of Physics. [S0021-8979(98)01903-3].