248 nm Lithography for 180 nm contact holes

被引：2

作者：

Romeo, C ^{[1
]}

Fiorino, A ^{[1
]}

Canestrari, P ^{[1
]}

机构：

[1] STMicroelect Srl, I-20041 Agrate Brianza, Italy

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期

关键词：

Computer simulation - Degrees of freedom (mechanics) - Diffraction gratings - Glass - Interfaces (materials) - Masks - Scanning electron microscopy - Substrates;

D O I：

10.1016/S0167-9317(00)00276-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we describe the use of 248 nm lithography to define 0.18 mu m contact holes. For this application we evaluated two Attenuated Phase Shifting Masks (APSM) with transmission 3 and 6 %, in combination with a resist commonly used for binary mask applications. The side lobe effect, that normally limits the lithographic process window in the APSM applications, was decreased by means of a contact hole geometry such as to improve the diffraction pattern. Simulation results and printed wafers confirmed the validity of this approach.

引用

页码：113 / 117

页数：5