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Electric field effect in atomically thin carbon films
被引:58389
作者:

Novoselov, KS
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机构: Univ Manchester, Dept Phys, Manchester M13 9PL, Lancs, England

Geim, AK
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机构:
Univ Manchester, Dept Phys, Manchester M13 9PL, Lancs, England Univ Manchester, Dept Phys, Manchester M13 9PL, Lancs, England

Morozov, SV
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h-index: 0
机构: Univ Manchester, Dept Phys, Manchester M13 9PL, Lancs, England

Jiang, D
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h-index: 0
机构: Univ Manchester, Dept Phys, Manchester M13 9PL, Lancs, England

Zhang, Y
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机构: Univ Manchester, Dept Phys, Manchester M13 9PL, Lancs, England

Dubonos, SV
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机构: Univ Manchester, Dept Phys, Manchester M13 9PL, Lancs, England

Grigorieva, IV
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机构: Univ Manchester, Dept Phys, Manchester M13 9PL, Lancs, England

Firsov, AA
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机构: Univ Manchester, Dept Phys, Manchester M13 9PL, Lancs, England
机构:
[1] Univ Manchester, Dept Phys, Manchester M13 9PL, Lancs, England
[2] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia
来源:
基金:
英国工程与自然科学研究理事会;
关键词:
D O I:
10.1126/science.1102896
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10(13) per square centimeter and with room-temperature mobilities of similar to10,000 square centimeters per volt-second can be induced by applying gate voltage.
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页码:666 / 669
页数:4
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[1]
Experimental evidence of a single nano-graphene
[J].
Affoune, AM
;
Prasad, BLV
;
Sato, H
;
Enoki, T
;
Kaburagi, Y
;
Hishiyama, Y
.
CHEMICAL PHYSICS LETTERS,
2001, 348 (1-2)
:17-20

Affoune, AM
论文数: 0 引用数: 0
h-index: 0
机构: Tokyo Inst Technol, Dept Chem, Meguro Ku, Tokyo 1528551, Japan

Prasad, BLV
论文数: 0 引用数: 0
h-index: 0
机构: Tokyo Inst Technol, Dept Chem, Meguro Ku, Tokyo 1528551, Japan

Sato, H
论文数: 0 引用数: 0
h-index: 0
机构: Tokyo Inst Technol, Dept Chem, Meguro Ku, Tokyo 1528551, Japan

论文数: 引用数:
h-index:
机构:

Kaburagi, Y
论文数: 0 引用数: 0
h-index: 0
机构: Tokyo Inst Technol, Dept Chem, Meguro Ku, Tokyo 1528551, Japan

Hishiyama, Y
论文数: 0 引用数: 0
h-index: 0
机构: Tokyo Inst Technol, Dept Chem, Meguro Ku, Tokyo 1528551, Japan
[2]
Carbon nanotubes - the route toward applications
[J].
Baughman, RH
;
Zakhidov, AA
;
de Heer, WA
.
SCIENCE,
2002, 297 (5582)
:787-792

Baughman, RH
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Texas, Nanotech Inst, Richardson, TX 75083 USA Univ Texas, Nanotech Inst, Richardson, TX 75083 USA

Zakhidov, AA
论文数: 0 引用数: 0
h-index: 0
机构: Univ Texas, Nanotech Inst, Richardson, TX 75083 USA

de Heer, WA
论文数: 0 引用数: 0
h-index: 0
机构: Univ Texas, Nanotech Inst, Richardson, TX 75083 USA
[3]
Hall constant in quantum-sized semimetal Bi films: Electric field effect influence
[J].
Butenko, AV
;
Shvarts, D
;
Sandomirsky, V
;
Schlesinger, Y
;
Rosenbaum, R
.
JOURNAL OF APPLIED PHYSICS,
2000, 88 (05)
:2634-2640

Butenko, AV
论文数: 0 引用数: 0
h-index: 0
机构:
Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel

Shvarts, D
论文数: 0 引用数: 0
h-index: 0
机构: Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel

Sandomirsky, V
论文数: 0 引用数: 0
h-index: 0
机构: Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel

Schlesinger, Y
论文数: 0 引用数: 0
h-index: 0
机构: Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel

Rosenbaum, R
论文数: 0 引用数: 0
h-index: 0
机构: Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel
[4]
Organic thin-film transistors: A review of recent advances
[J].
Dimitrakopoulos, CD
;
Mascaro, DJ
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
2001, 45 (01)
:11-27

Dimitrakopoulos, CD
论文数: 0 引用数: 0
h-index: 0
机构: IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

Mascaro, DJ
论文数: 0 引用数: 0
h-index: 0
机构: IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
[5]
INTERCALATION COMPOUNDS OF GRAPHITE
[J].
DRESSELHAUS, MS
;
DRESSELHAUS, G
.
ADVANCES IN PHYSICS,
1981, 30 (02)
:139-326

DRESSELHAUS, MS
论文数: 0 引用数: 0
h-index: 0
机构: MIT, CTR MAT SCI & ENGN, CAMBRIDGE, MA 02139 USA

DRESSELHAUS, G
论文数: 0 引用数: 0
h-index: 0
机构: MIT, CTR MAT SCI & ENGN, CAMBRIDGE, MA 02139 USA
[6]
Fabrication of mesoscopic devices from graphite microdisks
[J].
Dujardin, E
;
Thio, T
;
Lezec, H
;
Ebbesen, TW
.
APPLIED PHYSICS LETTERS,
2001, 79 (15)
:2474-2476

Dujardin, E
论文数: 0 引用数: 0
h-index: 0
机构: NEC Res Inst, Princeton, NJ 08540 USA

Thio, T
论文数: 0 引用数: 0
h-index: 0
机构: NEC Res Inst, Princeton, NJ 08540 USA

Lezec, H
论文数: 0 引用数: 0
h-index: 0
机构: NEC Res Inst, Princeton, NJ 08540 USA

Ebbesen, TW
论文数: 0 引用数: 0
h-index: 0
机构: NEC Res Inst, Princeton, NJ 08540 USA
[7]
Novel electronic wave interference patterns in nanographene sheets
[J].
Harigaya, K
;
Kobayashi, Y
;
Takai, K
;
Ravier, J
;
Enoki, T
.
JOURNAL OF PHYSICS-CONDENSED MATTER,
2002, 14 (36)
:L605-L611

Harigaya, K
论文数: 0 引用数: 0
h-index: 0
机构:
AIST, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan AIST, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan

论文数: 引用数:
h-index:
机构:

Takai, K
论文数: 0 引用数: 0
h-index: 0
机构: AIST, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan

Ravier, J
论文数: 0 引用数: 0
h-index: 0
机构: AIST, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan

论文数: 引用数:
h-index:
机构:
[8]
Nanotube molecular wires as chemical sensors
[J].
Kong, J
;
Franklin, NR
;
Zhou, CW
;
Chapline, MG
;
Peng, S
;
Cho, KJ
;
Dai, HJ
.
SCIENCE,
2000, 287 (5453)
:622-625

Kong, J
论文数: 0 引用数: 0
h-index: 0
机构: Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Franklin, NR
论文数: 0 引用数: 0
h-index: 0
机构: Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Zhou, CW
论文数: 0 引用数: 0
h-index: 0
机构: Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Chapline, MG
论文数: 0 引用数: 0
h-index: 0
机构: Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Peng, S
论文数: 0 引用数: 0
h-index: 0
机构: Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Cho, KJ
论文数: 0 引用数: 0
h-index: 0
机构: Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Dai, HJ
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem, Stanford, CA 94305 USA Stanford Univ, Dept Chem, Stanford, CA 94305 USA
[9]
Graphitic cones and the nucleation of curved carbon surfaces
[J].
Krishnan, A
;
Dujardin, E
;
Treacy, MMJ
;
Hugdahl, J
;
Lynum, S
;
Ebbesen, TW
.
NATURE,
1997, 388 (6641)
:451-454

Krishnan, A
论文数: 0 引用数: 0
h-index: 0
机构: NEC RES INST, PRINCETON, NJ 08540 USA

Dujardin, E
论文数: 0 引用数: 0
h-index: 0
机构: NEC RES INST, PRINCETON, NJ 08540 USA

Treacy, MMJ
论文数: 0 引用数: 0
h-index: 0
机构: NEC RES INST, PRINCETON, NJ 08540 USA

Hugdahl, J
论文数: 0 引用数: 0
h-index: 0
机构: NEC RES INST, PRINCETON, NJ 08540 USA

Lynum, S
论文数: 0 引用数: 0
h-index: 0
机构: NEC RES INST, PRINCETON, NJ 08540 USA

Ebbesen, TW
论文数: 0 引用数: 0
h-index: 0
机构: NEC RES INST, PRINCETON, NJ 08540 USA
[10]
Sensitivity of single multiwalled carbon nanotubes to the environment -: art. no. 138
[J].
Krüger, M
;
Widmer, I
;
Nussbaumer, T
;
Buitelaar, M
;
Schönenberger, C
.
NEW JOURNAL OF PHYSICS,
2003, 5
:138.1-138.11

Krüger, M
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Basel, Inst Phys, CH-4056 Basel, Switzerland Univ Basel, Inst Phys, CH-4056 Basel, Switzerland

论文数: 引用数:
h-index:
机构:

Nussbaumer, T
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Basel, Inst Phys, CH-4056 Basel, Switzerland Univ Basel, Inst Phys, CH-4056 Basel, Switzerland

Buitelaar, M
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Basel, Inst Phys, CH-4056 Basel, Switzerland Univ Basel, Inst Phys, CH-4056 Basel, Switzerland

Schönenberger, C
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Basel, Inst Phys, CH-4056 Basel, Switzerland Univ Basel, Inst Phys, CH-4056 Basel, Switzerland