Synthesis and optical properties of gallium arsenide nanowires

被引：267

作者：

Duan, XF ^{[1
]}

Wang, JF ^{[1
]}

Lieber, CM ^{[1
]}

机构：

[1] Harvard Univ, Cambridge, MA 02138 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 09期

关键词：

D O I：

10.1063/1.125956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gallium arsenide (GaAs) nanowires have been synthesized in bulk quantities and high purity by laser-assisted catalytic growth. Field-emission scanning electron microscopy and transmission electron microscopy investigations show that the GaAs nanowires are produced in > 90% yield, are single crystals with [111] growth axes, and have diameters varying from three to tens of nanometers, and lengths extending to tens of micrometers. Photoluminescence (PL) measurements made on individual GaAs nanowires show large blueshifts in the PL peak position compared to bulk GaAs, and are consistent with strong quantum confinement. The implications of these results are discussed. (C) 2000 American Institute of Physics. [S0003-6951(00)01509-6].

引用

页码：1116 / 1118

页数：3

共 25 条

[1] Semiconductor clusters, nanocrystals, and quantum dots [J].