Event-related potential correlates of serial-position effects during an elaborative memory test

Twenty undergraduate students participated in an elaborative learning test to evaluate the relationship between electrical brain activity and subsequently recalled and not-recalled words. Data collected from the midline (Fz, Cz, Pz) and lateral scalp sites (F3, F4, C3, C4, P3, P4) were analysed. The difference between event-related potentials (ERPs) elicited by subsequently recalled and not-recalled words, the ERP memory effect, was evaluated for each portion (primacy, plateau and recency) of the serial-position curve (SPC). We compared peak amplitudes for the PI, N1, P2, N400, P3 and frontal positive slow wave (FPSW) components. The electrophysiological data support the hypothesis that different mechanisms underlie primacy and recency effects during free recall paradigms. There was no support for the hypothesis that an association arises between memory and the FPSW when subjects utilise elaborative learning strategies. The P2 component predicted subsequent recall at the primacy portion of the SPC, and PI predicted recall at the primacy and plateau portions of the curve. The findings suggest that the early positive components of the ERP (i.e. P1 and P2) are useful indices of the differential stimulus processing during elaborative learning which predicts later recall. (C) 2002 Elsevier Science B.V. All rights reserved.