High temperature ohmic contacts to p-type SiC

被引：3

作者：

Crofton, J ^{[1
]}

Beyer, L ^{[1
]}

Hogue, T ^{[1
]}

Siergiej, RR ^{[1
]}

Mani, S ^{[1
]}

Casady, JB ^{[1
]}

Oder, TN ^{[1
]}

Williams, JR ^{[1
]}

Luckowski, ED ^{[1
]}

Isaacs-Smith, T ^{[1
]}

Iyer, VR ^{[1
]}

Mohney, SE ^{[1
]}

机构：

[1] Murray State Univ, Murray, KY 42071 USA

来源：

1998 FOURTH INTERNATIONAL HIGH TEMPERATURE ELECTRONICS CONFERENCE | 1998年

关键词：

D O I：

10.1109/HITEC.1998.676765

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

Two high temperature ohmic contacts to epitaxial p-type SiC using Ti and CrB2, will be discussed. Fabrication techniques will be described along with the results of electrical and physical characterization of these contacts. Transmission line measurements show that these contacts have specific contact resistances almost as low as contacts using AI-Ti, however these contacts exhibit much more reproducibility and are more stable at elevated temperatures. Physical analysis will also show that the surface morphology of these contacts is superior to conventional Al-Ti ohmic contacts, The Ti contact is well suited for use in device fabrication processes since it requires a relatively low temperature (800 degrees C) anneal for only one minute to form the ohmic contact. The CrB2, on the other hand requires are 1100 degrees C anneal for 30 minutes to form the ohmic contact, although shorter annealing times yield linear contacts with much higher contact resistances. In addition, Ti ohmic contacts to implanted p-type material will be discussed. The implanted SiC used in this work consists of Al only and Al plus C co-implanted material. The specific contact resistances obtained to implanted SiC are found to vary considerably depending on the type of implant and the post activation anneal process that is used.

引用

页码：84 / 87

页数：4