A HIGH DENSITY FORM OF AMORPHOUS GE

被引：58

作者：

DONOVAN, TM

ASHLEY, EJ

SPICER, WE

机构：

来源：

PHYSICS LETTERS A | 1970年 / A 32卷 / 02期

关键词：

D O I：

10.1016/0375-9601(70)90101-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：85 / &

共 12 条

[1] EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS [J].

ADAMSKY, RF .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4301-&

[2] SOLID AMORPHOUS GE AND AS AS EXAMPLES OF LATTICE-LIKE AMORPHOUS SUBSTANCES [J].

BREITLING, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :628-+

[3] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].

BRODSKY, MH ;

TITLE, RS .

PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&

[4] SPECIFIC HEAT AND HEAT OF CRYSTALLIZATION OF AMORPHOUS GERMANIUM [J].

CHEN, HS ;

TURNBULL, D .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) :4214-&

[5]

CHEN HS, 1967, THESIS HARVARD U

[6]

CHOPRA KL, TO BE PUBLISHED

[7] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[8]

DAVEY JE, TO BE PUBLISHED

[9] EVIDENCE FOR A SHARP ABSORPTION EDGE IN AMORPHOUS GE [J].

DONOVAN, TM ;

SPICER, WE ;

BENNETT, JM .

PHYSICAL REVIEW LETTERS, 1969, 22 (20) :1058-&

[10]

DONOVAN TM, TO BE PUBLISHED

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