THEORETICAL STUDIES OF SI AND GAAS SURFACES AND INITIAL STEPS IN OXIDATION

被引：112

作者：

GODDARD, WA ^{[1
]}

BARTON, JJ ^{[1
]}

REDONDO, A ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH, HARRY G STEELE LAB ELECT SCI, PASADENA, CA 91125 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569753

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1274 / 1286

页数：13

共 59 条

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[7]

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[8]

CHADI DJ, PHYS REV B

[9] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

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COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[10] OXYGEN SORPTION AND EXCITONIC EFFECTS ON GAAS SURFACES [J].

CHYE, PW ;

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SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :917-919

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