AUGER ELECTRON SPECTROSCOPY OF SI

被引：80

作者：

GRANT, JT

HAAS, TW

机构：

来源：

SURFACE SCIENCE | 1970年 / 23卷 / 02期

关键词：

D O I：

10.1016/0039-6028(70)90157-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：347 / &

共 26 条

[1] ON NATURE OF ANNEALED SEMICONDUCTOR SURFACES [J].

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[2]

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[3]

Bishop H. E., 1969, British Journal of Applied Physics (Journal of Physics D), V2, P1635

[4] CHARACTERISTIC IONIZATION LOSSES OBSERVED IN AUGER EMISSION SPECTROSCOPY [J].

BISHOP, HE ;

RIVIERE, JC .

APPLIED PHYSICS LETTERS, 1970, 16 (01) :21-&

[5] AUGER SPECTROSCOPY OF SILICON [J].

BISHOP, HE ;

RIVIERE, JC ;

TAYLOR, NJ .

SURFACE SCIENCE, 1969, 17 (02) :462-&

[6] SILICON SURFACE STRUCTURE [J].

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ABBINK, HC .

APPLIED PHYSICS LETTERS, 1968, 13 (06) :212-&

[7]

BURHOP EHS, 1952, AUGER EFFECT OTHER R

[8]

Charig J. M., 1970, Surface Science, V19, P283, DOI 10.1016/0039-6028(70)90039-7

[9] IONIZATION SPECTROSCOPY OF SURFACES [J].

GERLACH, RL ;

HOUSTON, JE ;

PARK, RL .

APPLIED PHYSICS LETTERS, 1970, 16 (04) :179-&

[10] ON NATURE OF SI(111) SURFACES [J].

GRANT, JT ;

HAAS, TW .

APPLIED PHYSICS LETTERS, 1969, 15 (05) :140-&

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