EVAPORATION OF IMPURITIES FROM SEMICONDUCTORS

被引：22

作者：

LEHOVEC, K

SCHOENI, K

ZULEEG, R

机构：

来源：

关键词：

D O I：

10.1063/1.1722765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：420 / 423

页数：4

共 10 条

[1] COPPER AS AN ACCEPTOR ELEMENT IN GERMANIUM [J].

FULLER, CS ;

STRUTHERS, JD .

PHYSICAL REVIEW, 1952, 87 (03) :526-527

[2] P-N JUNCTIONS PRODUCED BY GROWTH RATE VARIATION [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 88 (01) :139-139

HALL, RN .

[4]

KROMER H, 1953, NATURWISSENSCHAFTEN, V40, P578

[5] A HIGH-FREQUENCY DIFFUSED BASE GERMANIUM TRANSISTOR [J].

LEE, CA .

BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (01) :23-34

MOLL, JL ;

ROSS, IM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01) :72-78

[7]

REDICKER RH, 1956, 2ND ANN TECHN M EL D

[8]

SABY J, 1953, PHYS REV, V90, P660

[9] Simplified and advanced Theory of the Boundary Layer Rectifiers [J].

Schottky, W. .

ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10) :539-592

[10]

TANENBAUM M, 1956, AT&T TECH J, V35, P1