ELECTRONIC STRUCTURE OF SINGLE VACANCY IN SILICON

被引：45

作者：

CALLAWAY, J

机构：

来源：

PHYSICAL REVIEW B-SOLID STATE | 1971年 / 3卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.3.2556

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2556 / &

共 17 条

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