PREPARATION OF CRYSTALS OF INAS, INP, GAAS, AND GAP BY A VAPOR PHASE REACTION

被引:60
作者
ANTELL, GR
EFFER, D
机构
关键词
D O I
10.1149/1.2427398
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:509 / 511
页数:3
相关论文
共 4 条
[1]  
LIU TS, 1953, T AM SOC METAL, V45, P677
[2]   SOME PROPERTIES OF SEMICONDUCTING INDIUM PHOSPHIDE [J].
REYNOLDS, WN ;
LILBURNE, MT ;
DELL, RM .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (459) :416-421
[3]  
VONDERBOOMGAARD J, 1953, PHILIPS RES REPTS, V12, P127
[4]  
VONGIESECKE G, 1958, ACTA CRYST, V11, P369