CROSS SECTIONS OF MIDGAP SURFACE STATES IN SILICON BY PULSED FIELD EFFECT EXPERIMENT

被引：43

作者：

RUPPRECHT, G

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(60)90231-6

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：208 / 213

页数：6

共 7 条

[1]

KLEIN C, UNPUB

[2] RADIATION-INDUCED ENERGY LEVELS IN SILICON [J].

KLEIN, CA .

[3] ENERGY LEVELS IN NEUTRON-IRRADIATED N-TYPE SILICON [J].

RUPPRECHT, G ;

KLEIN, CA .

PHYSICAL REVIEW, 1959, 116 (02) :342-343

[4] MEASUREMENT OF GERMANIUM SURFACE STATES BY PULSED CHANNEL EFFECT [J].

RUPPRECHT, G .

PHYSICAL REVIEW, 1958, 111 (01) :75-81

[5]

RUPPRECHT G, 1958, B AM PHYS SOC, V3, P377

[6] SURFACE STATES ON SILICON AND GERMANIUM SURFACES [J].

STATZ, H ;

DEMARS, G ;

DAVIS, L ;

ADAMS, A .

PHYSICAL REVIEW, 1957, 106 (03) :455-464

[7]

STATZ H, 1957, SEMICONDUCTOR SURFAC, P139