STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES

被引：1777

作者：

CARD, HC

RHODERICK, EH

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1971年 / 4卷 / 10期

关键词：

D O I：

10.1088/0022-3727/4/10/319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1589 / +

页数：1

共 16 条

[1]

[Anonymous], 1957, RECTIFYING SEMICONDU

[2] DEPENDENCE OF SCHOTTKY BARRIER HEIGHT ON DONOR CONCENTRATION [J].

ARCHER, RJ ;

YEP, TO .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :303-&

[3] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J].

ARCHER, RJ .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) :970-&

[4] CARRIER TRANSPORT ACROSS METAL-SEMICONDUCTOR BARRIERS [J].

CHANG, CY ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :727-+

[5] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[6] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES [J].

COWLEY, AM .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3024-&

[7] SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES [J].

CROWELL, CR ;

SHORE, HB ;

LABATE, EE .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3843-&

[8] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[9] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING [J].

GOETZBERGER, A ;

HEINE, V ;

NICOLLIAN, EH .

APPLIED PHYSICS LETTERS, 1968, 12 (03) :95-+

[10] TUNNELING FROM METAL TO SEMICONDUCTORS [J].

GRAY, PV .

PHYSICAL REVIEW, 1965, 140 (1A) :A179-+

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