SEMICONDUCTOR CIRCUIT ELEMENTS

被引：5

作者：

BLAKEMORE, JS

DEBARR, AE

GUNN, JB

机构：

来源：

REPORTS ON PROGRESS IN PHYSICS | 1953年 / 16卷

关键词：

D O I：

10.1088/0034-4885/16/1/305

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：160 / 215

页数：56

共 128 条

[1]

AIGRAIN P, 1950, CR HEBD ACAD SCI, V230, P62

[2] THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE [J].

BARDEEN, J ;

BRATTAIN, WH .

PHYSICAL REVIEW, 1948, 74 (02) :230-231

[3] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].

BARDEEN, J ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1950, 80 (01) :72-80

[4] THEORY OF RELATION BETWEEN HOLE CONCENTRATION AND CHARACTERISTICS OF GERMANIUM POINT CONTACTS [J].

BARDEEN, J .

BELL SYSTEM TECHNICAL JOURNAL, 1950, 29 (04) :469-495

[5] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[6] PHYSICAL PRINCIPLES INVOLVED IN TRANSISTOR ACTION [J].

BARDEEN, J ;

BRATTAIN, WH .

PHYSICAL REVIEW, 1949, 75 (08) :1208-1225

[7] EFFECTS OF ELECTRICAL FORMING ON THE RECTIFYING BARRIERS OF N-GERMANIUM AND P-GERMANIUM TRANSISTORS [J].

BARDEEN, J ;

PFANN, WG .

PHYSICAL REVIEW, 1950, 77 (03) :401-402

[8] PULSE MEASUREMENT OF THE INVERSE VOLTAGE CHARACTERISTIC OF GERMANIUM POINT CONTACTS [J].

BENNETT, AI ;

HUNTER, LP .

PHYSICAL REVIEW, 1951, 81 (01) :152-152

[9] HIGH INVERSE VOLTAGE GERMANIUM RECTIFIERS [J].

BENZER, S .

JOURNAL OF APPLIED PHYSICS, 1949, 20 (08) :804-815

[10]

BETHE HA, 1942, MIT4312 RAD LAB REP

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