THE SPECTRAL DISTRIBUTION OF THE INTRINSIC RADIATIVE RECOMBINATION IN SILICON

Microscopic calculations of the intrinsic radiative recombination probability B(omega,T) of Si have been performed to obtain the absolute values of the spectral distribution and of its temperature dependence. In these calculations we use the concepts of k.p theory, consider excitonic effects, and take into account the electron-phonon interaction. The calculated spectra are compared with measured absolute values of the intrinsic radiative recombination spectra obtained from forward biased Si p-i-n diodes and also with spectra obtained from the detailed balance theory of van Roosbroeck and Shockley [W. van Roosbroeck and W. Shockley, Phys. Rev. 94, 1558 (1954)]. Quantitative agreement is obtained for higher temperatures (about 300 K) and deviations for lower temperatures are critically discussed.