HALL MOBILITY OF ELECTRONS AND HOLES IN SILICON

被引：44

作者：

DEBYE, PP

KOHANE, T

机构：

来源：

PHYSICAL REVIEW | 1954年 / 94卷 / 03期

关键词：

D O I：

10.1103/PhysRev.94.724.2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：724 / 725

页数：2

共 7 条

[1]

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[2]

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CONWELL, EM .

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[4]

DEMARS G, COMMUNICATION

[5]

HERRING C, COMMUNICATION

[6] THE COMBINATION OF RESISTIVITIES IN SEMICONDUCTORS [J].

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LARKHOROVITZ, K .

PHYSICAL REVIEW, 1951, 82 (06) :977-978

[7] THE HALL COEFFICIENT OF SEMICONDUCTORS [J].

JONES, H .

PHYSICAL REVIEW, 1951, 81 (01) :149-149