TEST OF MCWHORTERS MODEL OF LOW-FREQUENCY NOISE IN SI-MOSTS

被引：5

作者：

BERZ, F

PRIOR, CG

机构：

来源：

关键词：

D O I：

10.1049/el:19700416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：595 / &

共 8 条

[1] THEORY OF LOW FREQUENCY NOISE IN SI MOSTS [J].

BERZ, F .

[2]

BERZ F, 1968, P C PHYSICAL ASPECTS, P135

[3] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J].

CHRISTEN.S ;

LUNDSTRO.I ;

SVENSSON, C .

[4] LOW FREQUENCY NOISE IN MOS FIELD EFFECT TRANSISTORS [J].

FLINN, I ;

BEW, G ;

BERZ, F .

[5]

Hawkins R. J., 1969, British Journal of Applied Physics (Journal of Physics D), V2, P1059

[6]

LUNDSTROM I, 1968, P C PHYSICAL ASPECTS, P131

[7]

MCWHORTER AL, 1956, SEMICONDUCTOR SURFAC, P207

[8] EVIDENCE OF SURFACE ORIGIN OF 1/F NOISE [J].

SAH, CT ;

HIELSCHER, F .