INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH

被引：137

作者：

ASTLES, MG ^{[1
]}

SMITH, FGH ^{[1
]}

WILLIAMS, EW ^{[1
]}

机构：

[1] ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 12期

关键词：

D O I：

10.1149/1.2403357

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1750 / 1757

页数：8

共 17 条

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[7]

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[8]

NELSON H, 1963, RCA REV, V24, P603

[9] GERMANIUM-DOPED GALLIUM ARSENIDE [J].

ROSZTOCZY, FE ;

ERMANIS, F ;

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JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :264-+

[10]

ROSZTOCZY FE, 1970, S GAAS AACHEN, P86

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