ELECTRONIC IMPURITY LEVELS IN SEMICONDUCTORS

被引：207

作者：

BASSANI, F

IADONISI, G

PREZIOSI, B

机构：

[1] UNIV ROME, IST FIS, ROME, ITALY

[2] UNIV NAPLES, IST FIS TEORICA, NAPLES, ITALY

[3] CNR, GRP NAZL STRUTT MATERIA, ROME, ITALY

来源：

REPORTS ON PROGRESS IN PHYSICS | 1974年 / 37卷 / 09期

关键词：

D O I：

10.1088/0034-4885/37/9/001

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1099 / 1210

页数：112

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