ANNEALING OF TE-IMPLANTED GAAS BY RUBY-LASER IRRADIATION

被引：62

作者：

GOLOVCHENKO, JA ^{[1
]}

VENKATESAN, TNC ^{[1
]}

机构：

[1] BELL TEL LABS INC,CRAWFORD HILL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 03期

关键词：

D O I：

10.1063/1.89962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：147 / 149

页数：3

共 14 条

[1]

ANTONENKO AK, 1976, SOV PHYS SEMICOND, V10, P265

[2] TELLURIUM IMPLANTATION IN GAAS [J].

EISEN, FH ;

WELCH, BM ;

MULLER, H ;

GAMO, K ;

INADA, T ;

MAYER, JW .

SOLID-STATE ELECTRONICS, 1977, 20 (03) :219-223

[3]

EISEN FH, 1973, ION IMPLANTATION SEM, P631

[4]

FOTI G, COMMUNICATION

[5]

FOTI G, UNPUBLISHED

[6] INVESTIGATION OF LASER-INDUCED DIFFUSION AND ANNEALING PROCESSES OF ARSENIC-IMPLANTED SILICON-CRYSTALS [J].

GEILER, HD ;

GOTZ, G ;

KLINGE, KD ;

TRIEM, N .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (02) :K171-K173

[7]

KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[8] LASER ANNEALING OF ARSENIC IMPLANTED SILICON [J].

KRYNICKI, J ;

SUSKI, J ;

UGNIEWSKI, S ;

GROTZSCHEL, R ;

KLABES, R ;

KREISSIG, U ;

RUDIGER, J .

PHYSICS LETTERS A, 1977, 61 (03) :181-182

[9]

KUTUKOVA OG, 1976, SOV PHYS SEMICOND+, V10, P265

[10] DOUBLE-LAYERED ENCAPSULANT FOR ANNEALING ION-IMPLANTED GAAS UP TO 1100DEGREESC [J].

LIDOW, A ;

GIBBONS, JF ;

MAGEE, T .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :158-161

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