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MODEL OF 1-F NOISE IN ION-IMPLANTED RESISTORS AS A FUNCTION OF THE RESISTANCE, DETERMINED BY A REVERSE BIAS VOLTAGE

被引：5
作者：
BECK, HGE
机构：
[1] Eindhoven University of Technology, Department of Electrical Engineering, Eindhoven
来源：
SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 05期
关键词：
D O I：
10.1016/0038-1101(79)90152-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A model is presented for the 1/f noise in ion-implanted resistors. The resistance was changed by a reverse bias voltage. The model explains the experimentally found square dependence between the relative 1/f noise intensity C/Co and the relative change in resistance R/Ro. © 1979.
引用
收藏
页码：475 / 478
页数：4
相关论文
共 12 条
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[10]   1-F NOISE IN THERMO EMF OF INTRINSIC AND EXTRINSIC SEMICONDUCTORS [J].
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