THE PBS-SI HETEROJUNCTION .1. GROWTH AND STRUCTURE OF PBS FILMS ON SILICON

被引:18
作者
RAHNAMAI, H
GRAY, HJ
ZEMEL, JN
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D O I
10.1016/0040-6090(80)90586-6
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T [工业技术];
学科分类号
08 ;
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页码:347 / 350
页数:4
相关论文
共 8 条
[1]   GE-EPITAXIAL-PBS HETEROJUNCTIONS [J].
DAVIS, JL ;
NORR, MK .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) :1670-&
[2]  
ESPEVIK S, 1971, J APPL PHYS, V42, P9
[3]  
KERN W, 1970, RCA REV JUN, P234
[4]  
KICINSKI F, 1948, CHEM IND-LONDON, P54
[5]  
LEE RN, 1974, 73213 US NAV ORDN LA
[6]   PHOTOCONDUCTIVITY OF LEAD SULFIDE FILMS [J].
MAHLMAN, GW .
PHYSICAL REVIEW, 1956, 103 (06) :1619-1630
[7]  
MYAMLIN VA, 1967, ELECTROCHEMISTRY SEM, P89
[8]   ELECTRICAL AND PHOTOVOLTAIC PROPERTIES OF PBS-SI HETERODIODES [J].
SIGMUND, H ;
BERCHTOLD, K .
PHYSICA STATUS SOLIDI, 1967, 20 (01) :255-+