STOICHIOMETRY OF THIN SILICON-OXIDE LAYERS ON SILICON

被引：95

作者：

SIGMON, TW

CHU, WK

LUGUJJO, E

MAYER, JW

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

[2] CALTECH,PASADENA,CA 91109

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 03期

关键词：

D O I：

10.1063/1.1655112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：105 / 107

页数：3

共 14 条

[1] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J].

ARCHER, RJ .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) :970-&

[2] ELECTRICAL PROPERTIES OF ANODICALLY GROWN SILICON DIOXIDE FILMS [J].

BEYNON, JDE ;

BLOODWORTH, GG ;

MCLEOD, IM .

SOLID-STATE ELECTRONICS, 1973, 16 (03) :309-314

[3]

BOGH E, PRIVATE COMMUNICATIO

[4] STUDIES OF SOLID SURFACES WITH 100 KEV 4HE+ AND H+ ION-BEAMS [J].

BUCK, TM ;

WHEATLEY, GH .

SURFACE SCIENCE, 1972, 33 (01) :35-&

[5]

CHU WH, TO BE PUBLISHED

[6]

CHU WK, 1973, THIN SOLID FILMS, V17

[7]

DAVIES JA, 1967, CAN J PHYS, V45, P407

[8] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :527-533

[9]

DUFFEK EF, 1965, ELECTROCHEM TECHNOL, V3, P75

[10] ION-BOMBARDMENT-ENHANCED ETCHING OF SILICON [J].

GIBBONS, JF ;

HECHTL, EO ;

TSURUSHIMA, T .

APPLIED PHYSICS LETTERS, 1969, 15 (04) :117-+

← 1 2 →