ANNEALING CHARACTERISTICS OF N-TYPE DOPANTS IN ION-IMPLANTED SILICON

被引：52

作者：

CROWDER, BL

MOREHEAD, FF

机构：

[1] IBM Watson Research Center, Yorktown Heights

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 10期

关键词：

D O I：

10.1063/1.1652664

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Investigations of the conditions under which the donors, P, As, and Sb, are incorporated into Si by by ion implantation (260-300 keV) in an electrically active form are reported. Above a critical dose, room-temperature implantations followed by a 600°C post anneal are substantially more effective than implantations at 600°C. © 1969 The American Institute of Physics.

引用

页码：313 / &

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