ELECTRONIC PROPERTIES OF (100) SURFACES OF GASB AND INAS AND THEIR ALLOYS WITH GAAS

被引：58

作者：

LUDEKE, R

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1978年 / 22卷 / 03期

关键词：

D O I：

10.1147/rd.223.0304

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：304 / 314

页数：11

共 24 条

[1]

APPLEBAUM JA, 1976, PHYS REV B, V14, P1623

[2]

APPLEBAUM JA, 1975, PHYS REV LETT, V35, P729

[3] EMPTY SEMICONDUCTOR SURFACE-STATES - CORE-LEVEL PHOTO-YIELD STUDIES [J].

BAUER, RS ;

BACHRACH, RZ ;

FLODSTROM, SA ;

MCMENAMIN, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :378-382

[4] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J].

CHANG, CA ;

LUDEKE, R ;

CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :759-761

[5] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHANG, LL ;

ESAKI, L ;

HOWARD, WE ;

LUDEKE, R ;

SCHUL, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05) :655-662

[6]

CHANG LL, 1975, EPITAXIAL GROWTH A

[7] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :2841-2843

[8] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2074-&

[9] INTERPRETATION OF SCANNING HIGH-ENERGY ELECTRON-DIFFRACTION MEASUREMENTS WITH APPLICATION TO GAAS SURFACES [J].

DOVE, DB ;

LUDEKE, R ;

CHANG, LL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) :1897-1899

[10] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS [J].

EASTMAN, DE ;

FREEOUF, JL .

PHYSICAL REVIEW LETTERS, 1975, 34 (26) :1624-1627

← 1 2 3 →