ULTRASHARP INTERFACES GROWN WITH VANDERWAALS EPITAXY

被引:180
作者
KOMA, A
YOSHIMURA, K
机构
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D O I
10.1016/0039-6028(86)90471-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:556 / 560
页数:5
相关论文
共 7 条
[1]  
ERTL G, 1974, LOW ENERGY ELECTRONS, P7
[2]   ELECTRON ESCAPE DEPTH IN SILICON [J].
KLASSON, M ;
BERNDTSSON, A ;
HEDMAN, J ;
NILSSON, R ;
NYHOLM, R ;
NORDLING, C .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 3 (06) :427-434
[3]   FABRICATION OF ULTRATHIN HETEROSTRUCTURES WITH VANDERWAALS EPITAXY [J].
KOMA, A ;
SUNOUCHI, K ;
MIYAJIMA, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :724-724
[4]  
KOMA A, 1985, 1984 P INT S NAN STR, P129
[5]  
KOMA A, 1979, I PHYS C SER, V43, P895
[6]  
KOMA A, 1985, 17TH C SOL STAT DEV, P13
[7]  
YOSHIMURA K, 1984, 16TH INT C SOL STAT, P293