ATOMIC INTER-DIFFUSION AT AU-AL-GAAS INTERFACES

被引：19

作者：

BRILLSON, LJ ^{[1
]}

BAUER, RS ^{[1
]}

BACHRACH, RZ ^{[1
]}

HANSSON, G ^{[1
]}

机构：

[1] XEROX PALO ALTO RES CTR,PALO ALTO,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 04期

关键词：

D O I：

10.1063/1.91480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：326 / 328

页数：3

共 25 条

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[2]

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[3]

BRILLSON LJ, 1978, J VAC SCI TECHNOL, V15, P1378, DOI 10.1116/1.569792

[4]

BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177

[5] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].

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[6] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].

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BACHRACH, RZ ;

BAUER, RS ;

MCMENAMIN, J .

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[7]

BRILLSON LJ, UNPUBLISHED

[8]

Chu W.K., 1977, BACKSCATTERING SPECT

[9] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION [J].

CHYE, PW ;

LINDAU, I ;

PIANETTA, P ;

GARNER, CM ;

SU, CY ;

SPICER, WE .

PHYSICAL REVIEW B, 1978, 18 (10) :5545-5559

[10] EVIDENCE FOR A NEW TYPE OF METAL-SEMICONDUCTOR INTERACTION ON GASB [J].

CHYE, PW ;

LINDAU, I ;

PIANETTA, P ;

GARNER, CM ;

SPICER, WE .

PHYSICAL REVIEW B, 1978, 17 (06) :2682-2684

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