LEAKY-MODE BURIED-HETEROSTRUCTURE ALGAAS INJECTION-LASERS

被引：25

作者：

KAJIMURA, T ^{[1
]}

SAITO, K ^{[1
]}

SHIGE, N ^{[1
]}

ITO, R ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,TOKYO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 11期

关键词：

D O I：

10.1063/1.89247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：590 / 591

页数：2

共 10 条

[1]

Arai M., COMMUNICATION

[2] REFRACTIVE-INDEX OF ALXGA1-X AS BETWEEN 1.2 AND 1.8 EV [J].

CASEY, HC ;

SELL, DD ;

PANISH, MB .

APPLIED PHYSICS LETTERS, 1974, 24 (02) :63-65

[3] LOW-THRESHOLD DOUBLE HETEROJUNCTION ALGAAS-GAAS LASER-DIODES - THEORY AND EXPERIMENT [J].

KRESSEL, H ;

ETTENBERG, M .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3533-3537

[4] LOSS MEASUREMENTS IN GAAS AND AL-XGA-1-XAS DIELECTRIC WAVEGUIDES BETWEEN 1.1 EV AND ENERGY-GAP [J].

MERZ, JL ;

LOGAN, RA ;

SERGENT, AM .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1436-1450

[5] LOW-LOSS ALXGA1-XAS WAVEGUIDES GROWN BY MOLECULAR-BEAM EPITAXY [J].

MERZ, JL ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1976, 28 (08) :456-458

[6] HOW MUCH AL IN ALGAAS-GAAS LASER [J].

RODE, DL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3887-3891

[7] LEAKY WAVE ROOM-TEMPERATURE DOUBLE HETEROSTRUCTURE GAAS - GAALAS DIODE-LASER [J].

SCIFRES, DR ;

STREIFER, W ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1976, 29 (01) :23-25

[8] CONCENTRATION-DEPENDENCE OF REFRACTIVE-INDEX FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.2 AND 1.8 EV [J].

SELL, DD ;

CASEY, HC ;

WECHT, KW .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2650-2657

[9] GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS [J].

TSUKADA, T .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4899-4906

[10]

TSUKADA T, 1975, JPN J APPL PHYS, V15, P289

← 1 →