RAMAN-SCATTERING STUDY OF ION-IMPLANTED AND CW-LASER ANNEALED POLYCRYSTALLINE SILICON

被引：31

作者：

NAKASHIMA, S ^{[1
]}

OIMA, S ^{[1
]}

MITSUISHI, A ^{[1
]}

NISHIMURA, T ^{[1
]}

FUKUMOTO, T ^{[1
]}

AKASAKA, Y ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,LSI RES & DEV LAB,ITAMI,HYOGO 664,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 40卷 / 07期

关键词：

D O I：

10.1016/0038-1098(81)90825-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：765 / 768

页数：4

共 8 条

[1] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J].

ANASTASSAKIS, E ;

PINCZUK, A ;

BURSTEIN, E ;

POLLAK, FH ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1970, 8 (02) :133-+

[2]

Baumgart H., 1980, Journal of the Physical Society of Japan, V49, P1291

[3] RAMAN-SCATTERING FROM BORON-IMPLANTED LASER-ANNEALED SILICON [J].

ENGSTROM, H ;

BATES, JB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) :2921-2925

[4] POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C [J].

IQBAL, Z ;

WEBB, AP ;

VEPREK, S .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :163-165

[5]

KANELLIS G, 1980, PHYS REV B, V21, P1534

[6] RAMAN STUDY OF LASER ANNEALED SILICON [J].

MORHANGE, JF ;

KANELLIS, G ;

BALKANSKI, M .

SOLID STATE COMMUNICATIONS, 1979, 31 (11) :805-808

[7]

MORHANGE JF, 1978, P LASER SOLID INTERA, P429

[8]

NISHIMURA T, UNPUBLISHED

← 1 →