CONTACT REACTIONS IN PD-GAAS JUNCTIONS

被引:51
作者
OLOWOLAFE, JO [1 ]
HO, PS [1 ]
HOVEL, HJ [1 ]
LEWIS, JE [1 ]
WOODALL, JM [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.326018
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:955 / 962
页数:8
相关论文
共 20 条
[1]  
CHANG CC, UNPUBLISHED
[2]  
ECKERLIN P, 1971, LANDALTBORNSTEIN GRO, V6, P311
[3]  
ELLIOT RP, 1958, CONSTITUTION BINARY
[4]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[5]  
GUPTA D, 1978, THIN FILMS INTERDIFF, pCH8
[6]   ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J].
GYULAI, J ;
MAYER, JW ;
RODRIGUEZ, V ;
YU, AYC ;
GOPEN, HJ .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3578-+
[7]   QUANTITATIVE AUGER ANALYSIS OF GOLD-COPPER-OXYGEN AND GOLD-NICKEL-OXYGEN SURFACES USING RELATIVE SENSITIVITY FACTORS [J].
HALL, PM ;
MORABITO, JM .
SURFACE SCIENCE, 1977, 67 (02) :373-392
[8]  
Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700
[9]   AUGER STUDY OF PREFERRED SPUTTERING ON BINARY ALLOY SURFACES [J].
HO, PS ;
LEWIS, JE ;
WILDMAN, HS ;
HOWARD, JK .
SURFACE SCIENCE, 1976, 57 (01) :393-405
[10]   DECONVOLUTION METHOD FOR COMPOSITION PROFILING BY AUGER SPUTTERING TECHNIQUE [J].
HO, PS ;
LEWIS, JE .
SURFACE SCIENCE, 1976, 55 (01) :335-348