ELASTIC AND ANELASTIC BEHAVIOR OF ION-IMPLANTED SILICON

被引：63

作者：

TAN, SI

BERRY, BS

CROWDER, BL

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 20卷 / 02期

关键词：

D O I：

10.1063/1.1654060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：88 / &

共 12 条

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