AUGER PROFILING OF ABRUPT LPE ALXGA1-XAS-GAAS HETEROJUNCTIONS

被引：21

作者：

GARNER, CM

SHEN, YD

KIM, JS

PEARSON, GL

SPICER, WE

HARRIS, JS

EDWALL, DD

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

[2] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 07期

关键词：

D O I：

10.1063/1.324046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3147 / 3149

页数：3

共 12 条

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[5] EFFECTS OF ZN CROSS DIFFUSION ON PROPERTIES OF N(ALXGA1-XAS)-P(GAAS) HETEROJUNCTIONS [J].

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[6] GA1-XALXAS SUPERLATTICES PROFILED BY AUGER-ELECTRON SPECTROSCOPY [J].

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[8] N-N SEMICONDUCTOR HETEROJUNCTIONS [J].

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[9]

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[10] PROPERTIES OF GE-DOPED GAAS AND ALXGA1-XAS,SN-DOPED ALXGA1-XAS AND SI-TE-DOPED GAAS [J].

SHIH, KK ;

PETTIT, GD .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (02) :391-408

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