THE ELECTRICAL STRUCTURE OF SEMICONDUCTOR SURFACES

被引：31

作者：

MANY, A

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1959年 / 8卷

关键词：

D O I：

10.1016/0022-3697(59)90282-3

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：87 / 96

页数：10

共 35 条

[1]

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[6]

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[9] HIGH-FREQUENCY RELAXATION PROCESSES IN THE FIELD-EFFECT EXPERIMENT [J].

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[10]

HANDLER P, 1957, SEMICONDUCTOR SURFAC

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