LONG LIFETIME (LASER) STATES IN PARA-TYPE SI-DOPED GAAS

被引：12

作者：

CRAFORD, MG

HERZOG, AH

HOLONYAK, N

KEUNE, DL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 06期

关键词：

D O I：

10.1063/1.1659276

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2648 / &

共 15 条

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[8]

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[9] EVIDENCE FOR QUASILOCALIZED STATES ASSOCIATED WITH HIGH-ENERGY CONDUCTION-BAND MINIMA IN SEMICONDUCTORS PARTICULARLY SE-DOPED GASB [J].

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PHYSICAL REVIEW LETTERS, 1966, 17 (05) :246-&

[10] SULFUR DONOR LEVEL ASSOCIATED WITH (100) CONDUCTION BAND OF GASB [J].

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PHYSICAL REVIEW LETTERS, 1966, 17 (23) :1175-&

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