ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES

被引:85
作者
DINAN, JH
GALBRAIT.LK
FISCHER, TE
机构
关键词
D O I
10.1016/0039-6028(71)90018-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:587 / &
相关论文
共 27 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]  
ARSENEVA.AN, 1965, FIZ TVERD TELA+, V7, P952
[3]  
ARSENEVAGEIL AN, 1961, FIZ TVERD TELA, V3, P3621
[4]  
ARSENEVAGEIL AN, 1965, FIZ TVERD TELA, V7, P1187
[5]  
ARSENEVAGEIL AN, 1962, SOVIET PHYS SOLID ST, V3, P2623
[6]   GIANT TEMPERATURE DEPENDENCE OF WORK FUNCTION OF GAP [J].
CHO, AY ;
ARTHUR, JR .
PHYSICAL REVIEW LETTERS, 1969, 22 (22) :1180-&
[7]  
DINAN JH, UNPUBLISHED
[8]   DETERMINATION OF SEMICONDUCTOR SURFACE PROPERTIES BY MEANS OF PHOTOELECTRIC EMISSION [J].
FISCHER, TE .
SURFACE SCIENCE, 1969, 13 (01) :30-&
[9]   GIANT TEMPERATURE DEPENDENCE OF WORK FUNCTION OF CESIUM-COVERED GAAS [J].
FISCHER, TE .
PHYSICAL REVIEW LETTERS, 1968, 21 (01) :31-&
[10]  
FISCHER TE, 1968, HELV PHYS ACTA, V41, P827