SILICON-REFRACTORY METAL INTERFACES - EVIDENCE OF ROOM-TEMPERATURE INTERMIXING FOR SI-CR

被引:35
作者
FRANCIOSI, A
PETERMAN, DJ
WEAVER, JH
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期
关键词
D O I
10.1116/1.571080
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:657 / 660
页数:4
相关论文
共 39 条
[1]   ELECTRONIC-STRUCTURE OF COMPOUNDS AT PLATINUM - SILICON (III) INTERFACE [J].
ABBATI, I ;
BRAICOVICH, L ;
DEMICHELIS, B ;
BISI, O ;
ROVETTA, R .
SOLID STATE COMMUNICATIONS, 1981, 37 (02) :119-122
[2]   EVIDENCE OF INTERMIXING AT SI(III)-AU INTERFACE AT LIQUID-NITROGEN TEMPERATURE [J].
ABBATI, I ;
BRAICOVICH, L ;
FRANCIOSI, A .
PHYSICS LETTERS A, 1980, 80 (01) :69-71
[3]   PHOTOEMISSION INVESTIGATION OF THE TEMPERATURE EFFECT ON SI-AU INTERFACES [J].
ABBATI, I ;
BRAICOVICH, L ;
FRANCIOSI, A ;
LINDAU, I ;
SKEATH, PR ;
SU, CY ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :930-935
[4]  
ABBATI I, UNPUBLISHED
[5]   CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].
ANDREWS, JM ;
PHILLIPS, JC .
PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59
[6]   VALENCE BAND FORMATION IN SMALL SILVER CLUSTERS [J].
APAI, G ;
LEE, ST ;
MASON, MG .
SOLID STATE COMMUNICATIONS, 1981, 37 (03) :213-217
[7]   3P-3D INTERSHELL INTERACTION IN CR [J].
BARTH, J ;
GERKEN, F ;
KOBAYASHI, KLI ;
WEAVER, JH ;
SONNTAG, B .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (07) :1369-1375
[8]   IS 1ST COMPOUND NUCLEATION AT METAL - SEMICONDUCTOR INTERFACES AN ELECTRONICALLY INDUCED INSTABILITY [J].
BENE, RW ;
WALSER, RM ;
LEE, GS ;
CHEN, KC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :911-915
[9]   GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J].
BOWER, RW ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1972, 20 (09) :359-&
[10]  
BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581