ENERGY-DEPENDENCE OF PHOTOELECTRON ATTENUATION LENGTH VIA OXIDATION OF SILICON

被引：12

作者：

MCGOVERN, IT

PARKE, AW

WILLIAMS, RH

机构：

[1] The New University of Ulster, Coleraine

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 26卷 / 01期

关键词：

D O I：

10.1016/0038-1098(78)90999-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The energy dependence of electron attenuation length in the range 20-60 eV has been determined through synchrotron radiation photoemission spectroscopy of the 2p core states in oxidised silicon (111) surfaces. The attenuation length is found to be approximately constant in this energy. © 1978.

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页码：21 / 23

页数：3

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